摘要： 對化學氣相沉積(CVD)多晶金剛石膜進行激光平整化的正交試驗,使用場發射環境掃描電子顯微鏡(SEM)進行形貌分析,激光共聚焦掃描顯微鏡測量線粗糙度R_(a)、面粗糙度S_(a)和切縫錐度,分析激光參數對CVD膜平整化的影響。結果表明:影響切縫錐度的因素依次為脈沖寬度、脈沖頻率、進給速度和激光電流,影響線粗糙度Ra的因素依次為進給速度、激光電流、脈沖頻率、脈沖寬度。正交試驗優化后,當激光電流為64 A、脈沖寬度為400μs、脈沖頻率為275 Hz、進給速度為100 mm/min時,可獲得最佳的切槽表面形貌。采用該優化參數進行面掃描,測得面粗糙度S_(a)為11.7μm;進一步增加入射角度至75°時,面粗糙度S_(a)降低至1.9μm,實際去除效率達到1.1 mm^(3)/min。

摘要： CVD金剛石膜的應用范圍日益擴大,已經從傳統的刀具、模具領域擴展至高頻通訊、光電、微電子等產業.本文首先通過理論分析建立拋光盤與工件之間的運動模型,然后根據建立的模型確定工件運動軌跡方程,并使用Matlab進行了拋光試驗的運動仿真,得出了最優的拋光轉速組合;最后采用電鍍金剛石盤進行拋光試驗,采用光學顯微鏡對金剛石膜拋光前后的表面形貌進行分析,采用Talysurf分析拋光前后的表面粗糙度.%With the expanding of the application scope of CVD diamond film,it has transformed from the traditional fields of cutting tool to high frequency communications,optoelectronics,microelectronics industry,etc.In this paper,firstly,motion model is established between pads and artifacts by theoretical analysis and the trajectory equation of workpiece is determined,and then movement simulation of polishing experiment has been carried out by using Matlab.Finally,electroplated diamond was carried out for polishing experiment,and optical microscope and Talysurf are used respectively for measuring surface morphology and surface roughness.

摘要： 目的通過分析CVD金剛石膜與幾種常用紅外光學窗口材料在砂蝕過程中形貌特征以及紅外透過率的變化規律,獲得CVD金剛石膜在砂蝕過程中的材料去除機制及抗砂蝕性能的關鍵因素。方法采用噴射式沖蝕磨損系統,對CVD金剛石膜及其他幾種常見紅外光學材料進行砂蝕性能測試。通過掃描電子顯微鏡對材料沖蝕后表面形貌進行觀察,電子天平測量紅外材料砂蝕率。采用紅外光譜儀對砂蝕前后紅外光學材料進行測量,評價其沖蝕前后的紅外性能變化。結果 CVD金剛石膜抗砂蝕能力遠高于Ge、ZnS、MgF_2以及石英玻璃。在設定測試條件下,僅經過6 s沖蝕,除CVD金剛石膜外,其余光學材料的紅外透過性能下降40%~60%。而CVD金剛石經受240 min的相同條件沖蝕,其紅外透過率僅下降9.5%,顯示出極佳的抗砂蝕能力。結論 CVD金剛石膜的沖蝕過程主要是微裂紋形成及擴張連接導致材料流失。其他材料的沖蝕過程既有裂紋擴展,也有反復的切削、犁削,而后者是這些材料被沖蝕的主要原因。

摘要： 采用微波等離子體化學氣相沉積法，以CH4-CO2為氣源，通過改變CO2的流量，探討了此氣源下金剛石膜的生長情況。利用掃描電子顯微鏡對制備的金剛石膜表面形貌和斷面進行了表征，采用Raman和X射線衍射儀對金剛石膜的質量和晶體結構進行分析。結果表明，CH4流量為50 mL/min時，CO2流量在20～40 mL/min范圍內可以沉積出完整的金剛石膜，CO2的流量對金剛石膜的表面形貌影響較大，在CO2/CH4=30∶50條件下，沉積速率可達到3.4μm/h，同時可以制備出高質量的金剛石膜。%Diamond films were deposited by microwave plasma chemistry vapor deposition method using CO2/CH4 gas mixtures without supplying additional hydrogen gas. In order to explore the best growth conditions of diamond film, We have a study about the effects of different CO2 flow on the growth of the diamond films. The surface morphologies and cross-section view were characterized by scanning electron microscopy. The qualities and crystal structure were analyzed by Raman spectroscopy and X-ray diffraction. The results show that the diamond films can be obtained within a certain range of CO2 flow rate,which had great influence on the surface morphology,with the CH4 was 50 mL/min. The high qual-ity and orientation of the diamond film was deposited under the condition of CO2/CH4=30∶50,with the growth rate reach 3.4 μm/h.

摘要： CN201510512339．4基于可控織構CVD金剛石膜的藍寶石球罩研磨工具申請人：南京航空航天大學一種基于可控織構CVD金剛石膜的小尺寸藍寶石球罩研磨工具主要由工具基體、可控織構CVD金剛石膜涂層鑲塊、彈性支撐體組成，在鑲塊基體上沉積有CVD金剛石膜，起研磨作用的金剛石晶粒在鑲塊的整個表面上分布均勻、致密，研磨效率高。

摘要： 采用微波等離子體化學氣相沉積方法（microwave plasma chemical vapor deposition ，MPCVD）在高沉積氣壓（34.5 kPa）下制備多晶金剛石，利用發射光譜（optical emission spectroscopy ，OES）在線診斷了CH4／H2／O2等離子體內基團的譜線強度及其空間分布，并利用拉曼（Raman）光譜評價了不同O2體積分數下沉積出的金剛石膜質量，研究了金剛石膜質量的均勻性分布問題。結果表明：隨著O2體積分數的增加， C2，C H及 Hα基團的譜線強度均呈下降的趨勢，而C2，C H與 Hα譜線強度比值也隨之下降，表明增加O2體積分數不僅導致等離子體中碳源基團的絕對濃度下降，而且碳源基團相對于氫原子的相對濃度也降低，使得金剛石的沉積速率下降而沉積質量提高。此外，具有刻蝕作用的O H基團的譜線強度卻隨著O2體積分數的增加而上升，這也有利于降低金剛石膜中非晶碳的含量。光譜空間診斷發現高沉積氣壓下等離子體內基團分布不均勻，特別是中心區域C2基團聚集造成該區域內非晶碳含量增加，最終導致金剛石膜質量分布的不均勻。%Polycrystalline diamond growth by microwave plasma chemical vapor deposition (MPCVD) at high‐pressure (34.5 kPa) was investigated .The CH4/H2/O2 plasma was detected online by optical emission spectroscopy (OES) ,and the spatial distribution of radicals in the CH4/H2/O2 plasma was studied .Raman spectroscopy was employed to analyze the properties of the diamond films deposited in different oxygen volume fraction .The uniformity of diamond films quality was researched .The results indicate that the spectrum intensities of C2 ,CH and Hαdecrease with the oxygen volume fraction increasing .While the intensity ratios of C2 ,CH to Hαalso reduced as a function of increasing oxygen volume fraction .It is shown that the decrease of the absolute concentration of carbon radicals is attributed to the rise volume fraction of oxygen ,while the relative concentration of carbon radicals to hydrogen atom is also reducing ,which depressing the growth rate but improving the quality of diamond film .Furthermore ,the OH radicals ,role of etching ,its intensities increase with the increase of oxygen volume fraction .Indica‐ted that the improvement of OH concentration is also beneficial to reduce the content of amorphous carbon in diamond films .The spectrum space diagnosis results show that under high deposition pressure the distribution of the radicals in the CH4/H2/O2 plasma is inhomogeneous ,especially ,that of radical C2 gathered in the central region .And causing a rapid increase of non‐dia‐mond components in the central area ,eventually enable the uneven distribution of diamond films quality .

摘要： 在CH4/H2氣氛下，利用直流熱陰極PCVD(Plasma chemical vapor deposition)設備制備的金剛石膜并研究其高溫氧化行為。對制備的樣品通過拉曼光譜儀、X射線衍射儀對其進行表征，結果表明：金剛石膜在空氣中氧化優先刻蝕非晶碳石墨處，使晶界瓦解；金剛石膜氧化前后未出現石墨或其它中間產物。

摘要： CVD金剛石膜因其極高的強度和耐磨特性在微機電系統(MEMS)領域具有極好的應用前景，然而其極高的硬度和化學惰性又使其很難被加工成型，這極大地限制了CVD金剛石膜在MEMS領域的應用。本文主要介紹了近年來干法刻蝕圖形化CVD金剛石膜的研究進展，系統地分析了激光刻蝕，等離子體刻蝕，等離子體輔助固體刻蝕的原理及其各自優缺點，著重論述了國內外采用等離子體刻蝕 CVD金剛石膜的研究現狀。%CVD diamond film has great application prospect in micro-electro mechanical systems MEMS because of its excellent intensity and abrasion resistant properties but its practical application in MEMS is limited for its high hardness and chemically stable which makes it difficult to fabricate In this paper the latest developments of dry etching graphically progress of CVD diamond film is introduced and the principles of the laser etching plasma etching plasma-assisted etching of solid and their respective advantages and disadvantages are systematically analyzed Great attention is focused on the plasma etching of CVD diamond film in domestic and international.

摘要： 在自主設計的具有非對稱磁鏡場位形的ECR等離子體裝置上進行CVD金剛石膜的刻蝕實驗,研究了基片溫度、工作氣壓和磁場位形三個工藝參數對刻蝕效果的影響.實驗結果表明:通過此方法刻蝕的CVD金剛石膜,其晶粒頂端被優先刻蝕,表面粗糙度降低.實際數據顯示,刻蝕溫度為20°C和150°C時,后者的刻蝕效果更好；工作氣壓為2×10-3 Pa和3×10-2 Pa時,前者的刻蝕效果更好；磁場強度為0.2T和0.15T時,前者的刻蝕效果更強.%CVD diamond films were etched by plasma on a self-developed electron cyclotron resonance (ECR) device. Influences of substrate temperature, working pressure and magnetic field configuration on etching effect were studied. Results showed that the top of the grain on CVD film was etched preferentially and that the- surface roughness Ra was reduced. The higher substrate temperature (150 °C compared with 20 °C ) , the lower working pressure (2 X 10-3 Pa compared with 3 X 10-2 Pa) , and the stronger magnetic field strength (0.2 T compared with 0. 15 T) contributed to a better etching effect.

摘要： 利用Nd:YAG型金剛石精密激光切割機,采用激光軸向偏焦法對化學氣相沉積(CVD)法制備的金剛石膜表面進行掃描式平整化處理,利用掃描電子顯微鏡(SEM)、粗糙度儀和金相顯微鏡對平整化后的金剛石表面進行表征,研究了激光充電電壓和焦點位置對掃描凹槽寬度和深度的影響,以及掃描間距對平整化效果的影響.研究結果表明:掃描凹槽寬度隨激光充電電壓的升高而增大；凹槽深度隨激光充電電壓的升高而增大,隨偏焦量的增大而增大.激光軸向偏焦法對CVD金剛石膜進行平整化處理后,其粗糙度顯著減小,利用氫等離子體對其表面進行刻蝕處理,能夠有效去除表層石墨,從而達到理想的平整化效果.%Inhomogeneous chemical vapor deposition (CVD) diamond thick films are flatted by a Nd:YAG laser cutting machine with axial offset-focus.The influences of laser voltage,laser frequency and focus position on the diameter and depth of scanning spot are researched respectively.In addition,the influence of scanning step on leveling result,which is characterized by a scanning electron microscope(SEM),a roughmeter and a optical microscope,is studied.The results show that the increase of laser voltage or focus offset contributes to the increase of depth of scanning spot,and the width of scanning groove will increase with the increase of laser voltage.The roughness of the CVD diamond films is reduced significantly after a flatting process,and the graphite on the surface of the diamond film due to laser processing is efficiently removed by etching of hydrogen plasma.