Development of micro-incandescence light sources on silicon substrate

機譯：硅基板上的微白熾光源的發(fā)展

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In this work we report one simple fabrication process to build incandescent microlamps over silicon microtips. By taking advantage of the underetch observed when the Si substrate is anisotropically etched in KOH solutions, specific silicon microtips are created which serve as mechanical supports for the incandescent light sources. A thin film of chrome is deposited by sputtering technique above the microtip and defined by photolitography in order to create an electrical resistance. Consequently, the electrical energy transformed in heat is concentrated in a small spot achieving temperatures high enough to produce incandescent light similar to a blackbody spectrum. To reduce the heat loss caused by the high thermal conductivity of silicon, a layer of silicon dioxide (SiO_2) placed between substrate and metal was necessary to avoid the use of large electrical currents to generate the incandescence in the light source. A SiO_2 film is also used as a protection layer against moisture and specially oxygen, since at high temperatures chrome can easily oxidize losing its electrical conductivity. As the microtips are very tall compared to photoresist thickness, the lift-off process was needed in order to guarantee that the top of the microtip would be covered by chrome. The results showed that it is possible to produce light in all visible spectrum by applying electrical power higher than 4 W.

機譯：在這項工作中，我們報告了一種在硅微尖端上構建白熾燈微燈的簡單制造過程。通過利用在KOH溶液中各向異性蝕刻Si基板時觀察到的底蝕，可以創(chuàng)建特定的硅微尖端，用作白熾光源的機械支撐。鉻的薄膜通過濺射技術沉積在微尖端上方，并通過光刻技術進行定義，以產(chǎn)生電阻。因此，在熱中轉化的電能集中在一個小點上，該小點達到足以產(chǎn)生類似于黑體光譜的白熾光的溫度。為了減少由硅的高導熱率引起的熱損失，必須在基板和金屬之間放置一層二氧化硅（SiO_2），以避免使用大電流在光源中產(chǎn)生白熾燈。 SiO_2薄膜還可用作防潮層，特別是防氧氣層，因為在高溫下鉻容易氧化而失去導電性。由于微尖端與光刻膠的厚度相比非常高，因此需要進行剝離工藝，以確保微尖端的頂部被鉻覆蓋。結果表明，通過施加高于4 W的電功率可以產(chǎn)生所有可見光譜的光。

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來源
《Micromachining and microfabrication process technology XV》|2010年|P.75900E.1-75900E.10|共10頁
會議地點 San Francisco CA(US)
作者
A. H. Gollub; rnD.O. Carvalho; rnG. Rehder; rnM.I. Alayo;
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作者單位

Polytechnic School, University of Sao Paulo, CP 61548, CEP 5424-970, Sao Paulo, SP, Brazil;

rnPolytechnic School, University of Sao Paulo, CP 61548, CEP 5424-970, Sao Paulo, SP, Brazil;

rnPolytechnic School, University of Sao Paulo, CP 61548, CEP 5424-970, Sao Paulo, SP, Brazil;

rnPolytechnic School, University of Sao Paulo, CP 61548, CEP 5424-970, Sao Paulo, SP, Brazil;

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原文格式 PDF
正文語種 eng
中圖分類微電子學、集成電路（IC）;
關鍵詞
MOEMS; microlamps; integrated optics; anisotropic etch; plasma CVD;

機譯：MOEMS；微燈集成光學各向異性蝕刻等離子CVD;

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Development of micro-incandescence light sources on silicon substrate

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