著錄項

• 來源
  《Magnetics, IEEE Transactions on》 |2014年第11期|1-4|共4頁
• 作者

  Ye Yuan; Wang Y.; Khalid M.; Kun Gao; Prucnal S.; Gordan O.D.; Salvan G.; Zahn D.R.T.; Skorupa W.; Helm M.; Shengqiang Zhou;

  展開▼
• 作者單位

  Helmholtz-Zentrum Dresden-Rossendorf, Inst. of Ion Beam Phys. & Mater. Res., Dresden, Germany;

  展開▼
• 收錄信息
• 原文格式 PDF
• 正文語種 eng
• 中圖分類
• 關鍵詞

  Curie temperature; Hall effect; III-V semiconductors; Raman spectra; compressive strength; ferromagnetic materials; gallium compounds; hole density; ion implantation; laser beam annealing; magnetic anisotropy; magnetic thin films; magnetoresistance; manganese compounds; pulsed laser deposition; recrystallisation; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; Curie temperature; GaMnP; Mn concentrations; anomalous Hall effect; carrier hole concentration; carrier mediated nature; ferromagnetic material; implanted layer; in-plane compressive strain; in-plane magnetic anisotropy; ion implantation; magnetic properties; microRaman spectroscopy; negative magnetoresistance; pulsed laser annealing; recrystallization; structural properties; transport properties; Annealing; Ion implantation; Magnetic hysteresis; Manganese; Perpendicular magnetic anisotropy; Temperature measurement; Dilute magnetic semiconductors (DMSs); GaMnP; ion implantation; pulsed laser annealing;

  機譯：居里溫度;霍爾效應;III-V族半導體;拉曼光譜;抗壓強度;鐵磁性材料;鎵化合物;空穴密度;離子注入;激光束退火;磁各向異性;磁性薄膜;磁致電阻;錳化合物;脈沖激光沉積;重結晶半導體生長半導體薄膜居里溫度GaMnP Mn濃度異常霍爾效應載流子濃度載流子性質鐵磁材料注入層面內壓縮應變面內磁各向異性離子注入;磁性能;顯微拉曼光譜;負磁阻;脈沖激光退火;再結晶;結構性能;傳輸性能;退火;離子注入;磁滯;錳;垂直磁各向異性;溫度測量;稀磁性半導體（DMSs）;GaMnP;離子注入;脈沖激光退火;