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首頁> 外文學位 >Amorphous indium gallium zinc oxide thin film transistors for active-matrix organic light-emitting displays.
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Amorphous indium gallium zinc oxide thin film transistors for active-matrix organic light-emitting displays.

機譯：用于有源矩陣有機發光顯示器的非晶銦鎵鋅氧化物薄膜晶體管。

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Active-matrix organic light-emitting display (AMOLED) is now generally viewed as the next generation display because of its vivid color, high contrast ratio, thin/light module, and low energy consumption. So far, most reported pixel circuits are either based on low temperature polysilicon (LTPS) thin film transistors (TFTs) or hydrogenated amorphous silicon (a-Si:H) TFTs. Both backplane technologies have their own shortcomings, such as nonuniformity of LTPS TFTs, low field-effect mobility and threshold voltage instability of a-Si:H TFTs. As a result, TFTs based on other semiconductor materials have been explored as an alternative approach to realize reliable, high resolution AMOLEDs. Among all, amorphous In-Ga-Zn-O (a-IGZO) TFTs possess certain advantages including visible transparency, low processing temperature, uniformity over large area, and good electrical performance, which make them very attractive for AMOLEDs.;The focus of this work has been to provide a more thorough understanding of the device performance of a-IGZO TFTs, along with the underlying semiconductor physics and their possible application to AMOLEDs. Firstly, the electronic structure of crystalline In-Ga-Zn-O was studied by ab initio quantum mechanics calculation. Then the electrical properties of a-IGZO TFTs were described, including the gate voltage dependent field-effect mobility and source/drain contact resistance. The operation principles of a-IGZO TFTs were further investigated by the channel region surface potential profile obtained by scanning Kelvin probe microscopy. The effect of temperature on the electrical properties of a-IGZO TFTs was investigated. The thermally activated drain current was explored, and the density of deep states profile was calculated from measured data. Current temperature stress measurements were performed on a-IGZO TFTs. Several factors were considered when investigating the electrically stability of the devices, including the stress time, stress temperature, stress current, and TFT biasing conditions. Finally, a-IGZO TFT SPICE model was developed based on the RPI a-Si:H TFT model. Several voltage- and current-programmed AMOLED pixel circuits were simulated. The effect of threshold voltage variation on the pixel circuit performance was investigated, and the potential advantages of using a-IGZO TFTs were discussed.
機譯：有源矩陣有機發光顯示器（AMOLED）由于其鮮艷的色彩，高對比度，薄/光模塊和低能耗，現在通常被視為下一代顯示器。迄今為止，大多數報道的像素電路要么基于低溫多晶硅（LTPS）薄膜晶體管（TFT），要么基于氫化非晶硅（a-Si：H）TFT。兩種背板技術都有其自身的缺點，例如LTPS TFT的不均勻性，低的場效應遷移率和a-Si：H TFT的閾值電壓不穩定性。結果，已經探索了基于其他半導體材料的TFT作為實現可靠的高分辨率AMOLED的替代方法。其中，非晶In-Ga-Zn-O（a-IGZO）TFT具有某些優勢，包括可見透明性，較低的處理溫度，大面積上的均勻性和良好的電性能，這使其對AMOLED極具吸引力。這項工作旨在更全面地了解a-IGZO TFT的器件性能，以及潛在的半導體物理學及其在AMOLED中的可能應用。首先，從頭算量子力學計算研究了In-Ga-Zn-O晶體的電子結構。然后描述了a-IGZO TFT的電學特性，包括取決于柵極電壓的場效應遷移率和源極/漏極接觸電阻。通過掃描開爾文探針顯微鏡獲得的溝道區域表面電勢曲線進一步研究了a-IGZO TFT的工作原理。研究了溫度對a-IGZO TFT電性能的影響。探索了熱激活的漏極電流，并根據測量數據計算了深態分布的密度。當前的溫度應力測量是在a-IGZO TFT上進行的。在研究器件的電穩定性時，考慮了幾個因素，包括應力時間，應力溫度，應力電流和TFT偏置條件。最后，基于RPI a-Si：H TFT模型開發了a-IGZO TFT SPICE模型。模擬了幾種電壓和電流編程的AMOLED像素電路。研究了閾值電壓變化對像素電路性能的影響，并討論了使用a-IGZO TFT的潛在優勢。

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  • 作者

    Chen, Charlene.;

  • 作者單位

    University of Michigan.;

  • 授予單位 University of Michigan.;
  • 學科 Engineering Electronics and Electrical.
  • 學位 Ph.D.
  • 年度 2010
  • 頁碼 105 p.
  • 總頁數 105
  • 原文格式 PDF
  • 正文語種 eng
  • 中圖分類
  • 關鍵詞

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