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Graphene-Si Heterogeneous Nanotechnology

機譯:石墨烯-硅異質納米技術

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It is widely envisioned that graphene, an atomic sheet of carbon that has generated very broad interest has the largest prospects for flexible smart systems and for integrated graphene-silicon (G-Si) heterogeneous very large-scale integrated (VLSI) nanoelectronics. In this work, we focus on the latter and elucidate the research progress that has been achieved for integration of graphene with Si-CMOS including: wafer-scale graphene growth by chemical vapor deposition on Cu/SiO_2/Si substrates, wafer-scale graphene transfer that afforded the fabrication of over 10,000 devices, wafer-scalable mitigation strategies to restore graphene's device characteristics via fluoropolymer interaction, and demonstrations of graphene integrated with commercial Si-CMOS chips for hybrid nanoelectronics and sensors. Metrology at the wafer-scale has led to the development of custom Raman processing software (GRISP) now available on the nanohub portal. The metrology reveals that graphene grown on 4-in substrates have monolayer quality comparable to exfoliated flakes. At room temperature, the high-performance passivated graphene devices on SiO_2/Si can afford average mobilities 3000cm~2/V-s and gate modulation that exceeds an order of magnitude. The latest growth research has yielded graphene with high mobilities greater than 10,000cm~2/V-s on oxidized silicon. Further progress requires track-compatible graphene-Si integration via wafer bonding in order to translate graphene research from basic to applied research in commercial R&D laboratories to ultimately yield a viable nanotechnology.
機譯:人們普遍認為,石墨烯是一種已引起廣泛關注的碳原子片,在柔性智能系統和集成石墨烯-硅(G-Si)異質超大規模集成(VLSI)納米電子學方面具有最大的前景。在這項工作中,我們將重點放在后者上,并闡明了石墨烯與Si-CMOS集成所取得的研究進展,包括:通過在Cu / SiO_2 / Si襯底上進行化學氣相沉積來生長晶圓級石墨烯,晶圓級石墨烯轉移提供了10,000多種器件的制造,可通過晶圓縮放的緩解策略,通過含氟聚合物的相互作用來恢復石墨烯的器件特性,并演示了石墨烯與用于混合納米電子和傳感器的商用Si-CMOS芯片集成在一起的情況。晶圓級的計量技術導致開發了可在nanohub門戶上使用的定制拉曼處理軟件(GRISP)。計量結果表明,在4英寸底材上生長的石墨烯具有可與片狀薄片媲美的單層質量。在室溫下,基于SiO_2 / Si的高性能鈍化石墨烯器件可提供3000cm?2 / V-s的平均遷移率和超過一個數量級的柵極調制。最新的生長研究已經產生了在氧化硅上具有大于10,000cm?2 / V-s的高遷移率的石墨烯。進一步的進步需要通過晶圓鍵合實現軌道兼容的石墨烯-Si集成,以便將石墨烯研究從基礎上轉化為商業研發實驗室中的應用研究,從而最終產生可行的納米技術。

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